Abstract: In this work, we demonstrate the enlargement of the memory window of Si channel FeFET with ferroelectric Hf0.5Zr0.5O2 by gate-side dielectric interlayer engineering. By inserting a 3 nm Al2 ...

Abstract: With the rapid development of mobile Internet technology, mobile products such as smart phones and ipads are popular, and mobile devices with different screen sizes have become the ...

If you do not have access to MacOS, refer to the FAQ in the Usage section to build with GitHub Actions instead. You'll need MacOS to build, as you require Xcode from ...

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