Abstract: This paper provides a behavioral model in Pspice for a silicon carbide (SiC) power MOSFET rated at 1200 V / 30 A for a wide temperature range. The Pspice model was built using device ...

Abstract: A non-segmented PSpice model of silicon carbide metal-oxide semiconductor field effect transistor (SiC mosfet) with temperature-dependent parameters is proposed in this paper, which can ...

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PSpice/Silvaco Software Design of Experiments (DoE) Appropriate knowledge of bipolar, BiCMOS or power discrete device physics, and silicon level design techniques. Experience in device simulation ...