SANTA CLARA, Calif., April 21, 2022 (GLOBE NEWSWIRE) -- Applied Materials, Inc. today introduced innovations that help customers continue 2D scaling with EUV and detailed the industry’s broadest ...

Intel announces a major technical breakthrough and historic innovation in microprocessors: the world's first 3-D transistors, called Tri-Gate, in a production technology. The transition to 3-D ...

(Santa Barbara, Calif.) — For decades, field-effect transistors enabled by silicon-based semiconductors have powered the electronics revolution. But in recent years, manufacturers have come up against ...

As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...

There's been no greater act of magic in technology than the sleight of hand performed by Moore's Law. Electronic components that once fit in your palm have long gone atomic, vanishing from our world ...

A new technical paper, “Device/circuit simulations of silicon spin qubits based on a gate-all-around transistor,” was published by Teikyo University and RIKEN. “We theoretically investigated the ...

The ever-shrinking features of transistors etched in silicon have always required pushing the cutting edge of manufacturing technology. The discovery of atomically thin materials like graphene and ...