Silicon carbide (SiC) continues to carve out a place for itself in power electronics after decades of dominance by silicon. SiC-based power switches are becoming the gold standard in the three-phase ...

Navitas Semiconductor NVTS offers a robust and expanding line of silicon carbide (SiC) products through its GeneSiC brand, enabling high-voltage, high-efficiency, and high-reliability performance ...

In 2024, the global market size of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors was estimated to be worth USD 4,419 million, and is forecast to reach approximately USD 23,270 ...

Navitas Semiconductor has announced the launch of its new SiCPAK™ power modules, which utilize innovative epoxy-resin potting technology alongside proprietary trench-assisted planar SiC MOSFET ...

Rather than treating wireless road charging as a futuristic curiosity, Infineon and Electreon are now framing it as infrastructure that can rival the power levels of today’s top DC fast chargers. By ...

PHOENIX--(BUSINESS WIRE)--ON Semiconductor (Nasdaq: ON), driving energy efficient innovations, has introduced a full SiC power module for solar inverter applications, which has been selected by the ...

According to onsemi, SiC MOSFETs can run increasingly power-hungry cooling fans in AI data centers more efficiently and reliably than IGBTs. onsemi rolled out its first generation of SiC-based ...

A power module in DC fast chargers is a critical component that converts AC grid power into high-voltage DC power to charge EV batteries efficiently. It integrates rectifiers, inverters, and control ...

Underlying the hype for SiC (silicon carbide) and the future potential of GaN (gallium nitride) for EV power electronics, challenges remain for both technologies. While OEMs, tier-one suppliers, and ...

Navitas is now sampling 2.3-kV and 3.3-kV SiC MOSFETs in power-module, discrete, and known-good-die (KGD) formats. Leveraging fourth-generation GeneSiC Trench-Assisted Planar (TAP) technology, these ...