Negative capacitance field-effect transistors (NCFETs) represent a transformative approach in the design of low-power electronic devices. By integrating ferroelectric materials into the gate structure ...

(Nanowerk News) As our electronics continue to proliferate and become more sophisticated, the race continues for more power efficient and scaleable semiconductor devices — components that use minimal ...

the scaling of silicon-based metal-oxide-semiconductor field-effect transistors (Si MOSFETs) and evolution of novel structure transistors in accordance with Moore’s Law, especially for modern ...

A new technical paper titled “Recent Developments in Negative Capacitance Gate-All-Around Field Effect Transistors: A Review” by researchers at PKU-HKUST Shenzhen-Hong Kong Institution and Shenzhen ...

Berkeley — Computers may be growing smaller and more powerful, but they require a great deal of energy to operate. The total amount of energy the U.S. dedicates to computing has risen dramatically ...

Recent advances in semiconductor technology have pushed the concept of transistors with switching speeds greater than one terahertz, or one trillion cycles per second, closer to reality. Transistors ...

When a CMOS circuit is in an idle state there is still some static power dissipation–a result of leakage current through nominally off transistors. Both nMOS and pMOS transistors used in CMOS logic ...

Chipmaking systems create the smallest atomic-scale features in 3D Gate-All-Around transistors.

This year, several companies are expected to bring 600/650 V Gallium Nitride (GaN) power transistors to market. Almost all will be normally-on (depletion mode) transistors connected in a cascode ...

While the Miller effect might sound like fun, it is actually the effect of parasitic capacitance in amplifiers. What do you do about it? Watch the video below the break from [All Electronics] and find ...